PhD Position on High-precision Multi-level GaN-based Power Converters

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Power converters that are classically used for high voltage and high power applications have a limited switching frequency and thereby a limited output frequency bandwidth. However, with novel semiconductor technology and advanced power electronics topologies, we are aiming to improve these aspects significantly using gallium-nitride (GaN) based semiconductor technology.

The main focus of this PhD position is the development of advanced multi-level techniques to extend the operating voltage range of GaN semiconductor technology and to push the achievable output current bandwidth and precision. The ultimate goal is to have a converter suitable for symmetrical 1 kV output voltage range that realizes an effective switching frequency of 10 MHz, while reaching a THD of less than -100 dB. Numbers which are orders of magnitude apart from current state of the art, so the challenge is real. The candidate will work on this challenge by working on advanced modelling of components and converters (especially magnetics and semiconductors), optimization, and implementation-related issues such as cooling and integration. Eventually, you will make a full-scale laboratory prototype to demonstrate the developed technology.

This position is funded by the GaN4AP project, a project with over 40 academic and industrial partners. The global research objective of GaN4AP is to develop innovative Power Electronic Systems for power conversion and management with an advanced architecture and circuit topology based on state of the art GaN-based High Electron Mobility Transistors (HEMTs). Those HEMTs will be co-developed in a new concept high-frequency-compatible package. Additionally, new HEMT device architectures will be developed: AlScN-based HEMTs and Vertical HEMTs that will provide outstanding physical properties for highly efficient power transistors for close to 100% power circuit efficiency. Lastly, intelligent and integrated GaN-based circuit solutions will be developed in both System in Package (SiP) and Monolithic variants, which integrate a novel wire-bond free package, a state of the art BCD driver & controller.

Power electronics lab
This project will be carried out in the Power Electronics lab in the faculty of Electrical Engineering. The lab is world-leading in modeling, control and design techniques for power electronics, and in high-precision and high-performance power converters. Both fundamental and applied research is carried out and research collaborations with industrial partners are numerous.

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